Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Patent
1998-07-08
2000-09-05
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
257374, 257378, 257389, 257395, 257564, 257586, H01L 27082
Patent
active
061147427
ABSTRACT:
A photoresist pattern is formed on a field oxide film and an element forming region across the field oxide film and the element forming region such that a portion of a surface of the field oxide film and a portion of a surface of a silicon epitaxial layer are continuously exposed. The photoresist pattern is used as a mask to inject boron ions into the silicon epitaxial layer and heat treatment is performed thereon to form an external base containing the relatively significant crystal defect present in the silicon epitaxial layer in the vicinity of the field oxide film. Thus, a semiconductor device can be obtained including a bipolar transistor which provides improved breakdown voltage between the collector and the base and contemplates reduction of current leakage.
Abraham Fetsum
Mitsubishi Denki & Kabushiki Kaisha
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