Semiconductor device including copper interconnect line and...

Details Semiconductor device including copper interconnect line and... Semiconductor device including copper interconnect line and...

2005-05-03

2005-05-03

Clark, S. V. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Wire contact, lead, or bond

C257S765000, C257S762000, C438S687000, C438S688000, C438S652000

Reexamination Certificate

active

06888258

ABSTRACT:
A contact and a copper interconnect line as an uppermost interconnect layer are buried in an interlayer insulating film. A pad area including aluminum alloy (such as AlCu or AlSiCu) is buried in a predetermined area of the copper interconnect line. A gold wire is bonded to the pad area.

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