Semiconductor device including contact holes between...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C257S758000, C257S774000, C257S900000, C257SE23142, C257SE23145

Reexamination Certificate

active

09050113

ABSTRACT:
The semiconductor device comprises a semiconductor substrate10,a conducting film20formed on the semiconductor substrate10and including two conductor patterns adjacent to each other; an etching stopper film covering the upper surface of the conducting film20;an insulation film28which includes a contact hole which reaches the semiconductor substrate10between the two conductor patterns and the an end of which is positioned on the etching stopper film22on the two conductor patterns; and a sidewall insulation film32formed on the side walls of the conducting film20and of the etching stopper film22in the contact hole. The fluctuation of a contact hole size due to disalignment of the lithography can be restrained, and in the lithography step of opening the contact hole, the photoresist can have a large openings size, which facilitate the lithography step.

REFERENCES:
patent: 5498889 (1996-03-01), Hayden
patent: 5698902 (1997-12-01), Uehara et al.
patent: 5728595 (1998-03-01), Fukase
patent: 5977583 (1999-11-01), Hosotani et al.
patent: 6078073 (2000-06-01), Habu et al.
patent: 6127734 (2000-10-01), Kimura
patent: 8-37181 (1996-02-01), None
patent: 08037181 (1996-02-01), None

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