Semiconductor device including cascaded modulation-doped quantum

Details Semiconductor device including cascaded modulation-doped quantum Semiconductor device including cascaded modulation-doped quantum

1989-03-03

1991-04-16

Jackson, Jr., Jerome

Coherent light generators

Particular component circuitry

Optical pumping

357 4, 357 22, 357 30, 350354, 350355, 372 43, 372 45, 330 43, H01L 29205, H01L 2968

Patent

active

050087177

ABSTRACT:
Modulation-doped quantum well heterostructures are cascaded in a semiconductor device to achieve high speed operation while obtaining large index of refraction or absorption coefficient changes for modulating lightwave signals without significant increases in the operating potentials over prior quantum well structures. Each modulation-doped quantum well heterostructure exhibits substantially equal boundary conditions in an unbiased condition for efficient cascading or stacking. Each quantum well has associated with it a barrier layer to minimize leakage current. As a result, each quantum well has associated with it a separate charge reservoir. This aspect contributes to the speed of the cascaded structure. When incorporated within a waveguide structure, cascaded modulation-doped quantum well heterostructures can act as an external modulator, or as an intra-cavity wavelength tuning element, or as an intra-cavity modulator, or even as an optically-pumped laser.

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J. M. Iannelli et al., Appl. Phys. Lett., 54 (4), Jan. 23, 1989, "Optically Controlled Absorption Modulator Based on State . . . ", pp. 301-303.
W. Kopp et al., IEEE Elec. Dev. Lett., vol. EDL-3, No. 5, May 1982, "A New Al.sub.0.3 Ga.sub.0.7 As/GaAs Modulation-Doped FET", pp. 109-111.
T. J. Drummond et al., Proc. of the IEEE, vol. 74, No. 6, Jun. 1896, "Modulation-Doped GaAs/(Al,Ga)As . . . ", pp. 773-822.
T. J. Drummond et al., IEEE Spectrum, Jun. 1988, "Quantum-Tailored Solid-State Devices", pp. 33-37.

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