Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-04-11
2010-10-26
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S535000, C257SE29343
Reexamination Certificate
active
07821101
ABSTRACT:
A semiconductor device includes a lower electrode provided on a semiconductor substrate, an upper electrode provided on the lower electrode to overlap a part of the lower electrode, a first insulating film provided between the lower electrode and the upper electrode, and a second insulating film provided in contact with an upper part of the upper electrode and on the upper part of the lower electrode, and having a density higher than that of the first insulating film, the second insulating film covering a side surface and a top surface of the upper electrode.
REFERENCES:
patent: 6166424 (2000-12-01), Mikawa et al.
patent: 6881999 (2005-04-01), Lee et al.
patent: 2004/0043517 (2004-03-01), Sashida
patent: 2003-258108 (2003-09-01), None
patent: 2003-318269 (2003-11-01), None
patent: 2005-159290 (2005-06-01), None
Onuma Takuji
Oshida Daisuke
Takewaki Toshiyuki
Mandala Victor A
McGinn IP Law Group PLLC
NEC Electronics Corporation
Stowe Scott
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