Semiconductor device including bipolar transistor with step impu

Details Semiconductor device including bipolar transistor with step impu Semiconductor device including bipolar transistor with step impu

1991-06-14

1993-03-30

Rolf, Hille

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With emitter region having specified doping concentration...

257557, H01L 2900, H01L 2972, H01L 2704

Patent

active

051986922

ABSTRACT:
In a semiconductor device including a bipolar transistor having a base region formed in a collector region, and an emitter region formed in the base region, the emitter region comprises a high concentration region in contact with the base region, and a low concentration region provided between the base region and the high concentration region. The low concentration region is formed by introducing an impurity with a mask including a large opening. In addition, the high concentration region is formed by introducing an impurity with a mask including a small opening.

REFERENCES:
patent: 3585464 (1971-06-01), Castrucci et al.
patent: 4212683 (1980-07-01), Jones et al.
patent: 4833509 (1989-05-01), Hickox
patent: 4935375 (1990-06-01), Kasper et al.
Joshi et al., "Poly Emitter Bipolar Hot Carrier Effects in an Advanced BICMOS Technology", IEDM-87, 1987, pp. 182-185.

Affiliated with

Also associated with

Rating

Semiconductor device including bipolar transistor with step impu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including bipolar transistor with step impu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including bipolar transistor with step impu will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1283120