Semiconductor device including bipolar transistor having shallow

Details Semiconductor device including bipolar transistor having shallow Semiconductor device including bipolar transistor having shallow

1993-04-27

1995-04-11

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

257593, 257370, 257640, 257378, 437954, 437950, H01L 2972, H01L 2702

Patent

active

054061156

ABSTRACT:
A semiconductor device of this invention includes an N-type semiconductor region functioning as a collector of a bipolar transistor, a silicon dioxide film doped with boron and formed in contact with the surface of the N-type semiconductor region, a P-type semiconductor region formed in contact with the silicon dioxide film doped with boron in the N-type semiconductor region and functioning as a base of the bipolar transistor, and an N-type semiconductor region formed in the P-type semiconductor region and functioning as an emitter of the bipolar transistor.

REFERENCES:
patent: 4569123 (1986-02-01), Ishii et al.
patent: 4692786 (1987-09-01), Lindenfelser
patent: 5015594 (1991-05-01), Chu et al.
patent: 5065222 (1991-11-01), Ishii
patent: 5192992 (1993-03-01), Kim et al.

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