Semiconductor device including bipolar transistor having shallow

Details Semiconductor device including bipolar transistor having shallow Semiconductor device including bipolar transistor having shallow

1994-11-18

1996-01-16

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

257593, 257370, 257640, 257378, 437954, 437950, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

054850347

ABSTRACT:
A semiconductor device of this invention includes an N-type semiconductor region functioning as a collector of a bipolar transistor, a silicon dioxide film doped with boron and formed in contact with the surface of the N-type semiconductor region, a P-type semiconductor region formed in contact with the silicon dioxide film doped with boron in the N-type semiconductor region and functioning as a base of the bipolar transistor, and an N-type semiconductor region formed in the P-type semiconductor region and functioning as an emitter of the bipolar transistor.

REFERENCES:
patent: 4569123 (1986-02-01), Ishii et al.
patent: 4692786 (1987-09-01), Lindenfelser
patent: 4965220 (1990-10-01), Iwasaki
patent: 5015594 (1991-05-01), Chu et al.
patent: 5065222 (1991-11-01), Ishii
patent: 5192992 (1993-03-01), Kim et al.
patent: 5340770 (1994-08-01), Allman et al.

Affiliated with

Also associated with

Rating

Semiconductor device including bipolar transistor having shallow does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including bipolar transistor having shallow, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including bipolar transistor having shallow will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-311512