Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With means to increase current gain or operating frequency
Reexamination Certificate
2005-05-24
2005-05-24
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With means to increase current gain or operating frequency
C257S584000, C257S587000, C257S588000
Reexamination Certificate
active
06897547
ABSTRACT:
A semiconductor device includes a low resistance semiconductor substrate, a high resistance semiconductor layer formed on the substrate, an insulation layer formed on the semiconductor layer, and a transistor element composed of a collector region, abase region, and an emitter region formed in the semiconductor layer. The device further includes an emitter electrode formed in the insulation layer to be connected to the emitter region, a sub-emitter electrode formed in the insulation layer connected to the emitter electrode, a low resistance impurity-diffusion region formed in the semiconductor layer such that the sub-emitter electrode is connected to the substrate through the impurity-diffusion region, a base electrode formed in the insulation layer to be connected to the base region, and a base-bonding pad formed on the insulation layer to be connected to the base electrode. The base-bonding pad is placed on the insulation layer above the impurity-diffusion region to be at least partially encompassed with the impurity-diffusion region.
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Hu Shouxiang
NEC Compound Semiconductor Devices Ltd.
Sughrue & Mion, PLLC
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