Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1997-09-25
2000-03-21
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257632, 257758, 438703, H01L 2358, H01L 21316, H01L 2348
Patent
active
060406194
ABSTRACT:
A microelectronic device such as a Metal-Oxide-Semiconductor (MOS) transistor is formed on a semiconductor substrate. A tungsten damascene interconnect for the device is formed using an etch stop layer of silicon nitride, silicon oxynitride or silicon oxime having a high silicon content of approximately 40% to 50% by weight. The etch stop layer has high etch selectivity relative to overlying insulator materials such as silicon dioxide, tetraethylorthosilicate (TEOS) glass and borophosphosilicate glass (BPSG). The etch stop layer also has a high index of refraction and is anti-reflective, thereby improving critical dimension control during photolithographic imaging.
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Cagan Myron R.
Foote David K.
Gupta Subhash
Wang Fei
Advanced Micro Devices
Alexander David G.
Nadav Ori
Thomas Tom
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