Semiconductor device including an oblique surface and an electro

Details Semiconductor device including an oblique surface and an electro Semiconductor device including an oblique surface and an electro

1991-11-15

1993-07-27

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

Mesa structure

257627, 257739, 257745, 257773, 257776, H01L 2904, H01L 2348, H01L 29161

Patent

active

052313026

ABSTRACT:
A semiconductor device is made by etching a III-V compound semiconductor layer having a (100) surface using a mask having an opening defined by edges including at least one edge along an [011] direction of the layer so that the surface revealed by etching has a (111) orientation. An electrode is formed on the (111) surface by vacuum vapor deposition.

REFERENCES:
patent: 3765969 (1973-10-01), Kragness et al.
patent: 3920492 (1975-11-01), Sugita et al.
patent: 4079507 (1978-03-01), King
patent: 4438448 (1984-03-01), Harrington et al.
patent: 5065200 (1991-11-01), Bhat et al.
patent: 5151764 (1992-09-01), Suzuki
MacFadyen, "On The Preferential Etching Of GaAs By H.sub.2 SO.sub.4 -H.sub.2 O.sub.2 -H.sub.2 O", Journal of the Electrochemical Society, vol. 130, No. 9, Sep. 1983, pp. 1934-1941.
Adachi et al, "Chemical Etching Characteristics of (001) GaAs", Journal of the Electrochemical Society, vol. 130, No. 12, Dec. 1983, pp. 2427-2435.
Huo et al, "Modified Photoresist Etch Mask Process For InP Channeled Substrate Lasers", Journal of the Electrochemical Society, vol. 136, No. 3, Mar. 1989, pp. 772-775.

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