Semiconductor device including an island-like dielectric...

Details Semiconductor device including an island-like dielectric... Semiconductor device including an island-like dielectric...

2005-07-26

2005-07-26

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S773000, C257S774000

Reexamination Certificate

active

06921976

ABSTRACT:
A method for manufacturing a semiconductor device having flat pads. An opening and island-like dielectric films are first formed in a dielectric film. The opening is then filled with metal, and a metal layer is formed on the dielectric film. The upper surface of the metal layer is flattened using the CMP technique with the upper surface of the dielectric film functioning as a stopper. The island-like dielectric films prevent the occurrence of dishing in a conductive portion.

REFERENCES:
patent: 5602423 (1997-02-01), Jain
patent: 6100589 (2000-08-01), Tanaka
patent: 06-318590 (1994-11-01), None
patent: 6-318590 (1994-11-01), None
patent: 08-195393 (1996-07-01), None
patent: 09-008039 (1997-01-01), None
patent: 11-067763 (1999-03-01), None
patent: 11-162980 (1999-06-01), None
patent: WO 99/38204 (1999-07-01), None
Japan Office Action dated Feb. 22, 2005 in English language Translation.

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