Semiconductor device including an interconnect having copper...

Details Semiconductor device including an interconnect having copper... Semiconductor device including an interconnect having copper...

2006-05-09

2006-05-09

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000, C257S759000, C257S751000, C257S774000, C257S773000, C257S211000, C257S208000, C257S203000, C257S207000, C257S410000, C257S760000, C257S522000, C257S788000, C257S914000

Reexamination Certificate

active

07042095

ABSTRACT:
Provided are a semiconductor device comprising a semiconductor substrate, a first insulating film formed thereover, interconnects formed over the first insulating film and having copper as a main component, a second insulating film formed over the upper surface and side surfaces of each of the interconnects and over the first insulating film and having a function of suppressing or preventing copper diffusion, and a third insulating film formed over the second insulating film and having a dielectric constant lower than that of the second insulating film; and a method of manufacturing the semiconductor device. This invention makes it possible to improve dielectric breakdown strength between copper interconnects and reduce capacitance between the copper interconnects.

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