Semiconductor device including an IGBT and a current-regenerativ

Details Semiconductor device including an IGBT and a current-regenerativ Semiconductor device including an IGBT and a current-regenerativ

1994-02-22

1995-12-12

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With means to increase breakdown voltage

257110, 257112, 257121, 257124, 257127, 257146, 257494, 257577, 257586, 257587, 257618, 257622, H01L 2348, H01L 29744, H01L 29747

Patent

active

054752434

ABSTRACT:
An insulated-gate bipolar transistor (IGBT) is connected in reverse-parallel with a current-regenerative diode which, for economy of manufacture, is integrated with the IGBT. Such a diode may extend laterally on an IGBT chip, with two conductivity regions forming the diode respectively connected to emitter and collector electrodes of the IGBT. Alternatively, the diode may be formed by short-circuiting a buffer layer and a collector layer. By such integration, greater device packing density can be realized.

REFERENCES:
patent: 3697829 (1972-10-01), Huth et al.
patent: 3893153 (1975-07-01), Page et al.
patent: 4032364 (1979-06-01), Anthony et al.
patent: 4109274 (1978-08-01), Belenkov et al.
patent: 4636830 (1987-01-01), Bhagat
patent: 4672407 (1987-06-01), Nakagawa et al.
patent: 4841345 (1989-06-01), Majumdar
"Speeding Up the Built-in Diode of a Collector-Short-Circuit Type IGBT by Irradiating Protons" 463 The Institute of Electrical Engineers of Japan (Apr. 1991) No figures are provided.

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