Semiconductor device including an electrical contact...

Details Semiconductor device including an electrical contact... Semiconductor device including an electrical contact...

2006-06-13

2006-06-13

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S760000, C257S773000

Reexamination Certificate

active

07061112

ABSTRACT:
The semiconductor device comprises an interconnection buried in an interconnection groove formed in a lower insulating film, and an upper insulating film having a contact hole formed down to an end part of the interconnection. The interconnection groove is formed by using a design pattern having a main interconnection portion100and an extended portion104provided at an end part of a main interconnection portion100for forming the interconnection and extended perpendicularly to an extending direction of the main interconnection portion100.

REFERENCES:
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patent: 6040224 (2000-03-01), Tsukamoto
patent: 6239025 (2001-05-01), Bease et al.
patent: 6407455 (2002-06-01), Wald et al.
patent: 6753611 (2004-06-01), Maeno et al.
patent: 6787907 (2004-09-01), Watanabe et al.
patent: 2001-085614 (2001-03-01), None
patent: 2002-043417 (2002-02-01), None
patent: 2002-217316 (2002-08-01), None
patent: 2004-063855 (2004-02-01), None

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