Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material forms active...
Patent
1997-03-10
1998-01-27
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material forms active...
257 61, 257 72, 257350, 257351, 257353, 257354, 257408, 257900, H01L 2904, H01L 3136, H01L 31376
Patent
active
057124957
ABSTRACT:
A combination of a doping process and the use of side walls which allows the source and drain of a thin film transistor of an active matrix circuit to be doped with only one of N-type and P-type impurities and which allows the source and drain of a thin film transistor used in a peripheral circuit of the same conductivity type as that of the thin film transistor of the active matrix circuit to include both of N-type and P-type impurities. Also, a thin film transistor in an active matrix circuit has offset regions by using side walls, and another thin film transistor in a peripheral circuit has a lightly doped region by using side walls.
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Butts Karlton C.
Ferguson Jr. Gerald J.
Ngo Ngan V.
Semiconductor Energy Laboratory Co,. Ltd.
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