Semiconductor device including active layer of zinc oxide...

Details Semiconductor device including active layer of zinc oxide... Semiconductor device including active layer of zinc oxide...

2007-06-01

2009-10-06

Thai, Luan C (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257S076000, C257S079000, C257S352000

Reexamination Certificate

active

07598520

ABSTRACT:
A semiconductor device includes an oxide semiconductor thin film layer of zinc oxide. The (002) lattice planes of at least a part of the oxide semiconductor thin film layer have a preferred orientation along a direction perpendicular to a substrate of the semiconductor device and a lattice spacing d002of at least 2.619 Å.

REFERENCES:
patent: 6878962 (2005-04-01), Kawasaki et al.
patent: 2004/0201022 (2004-10-01), Yamazaki et al.
patent: 2005-150635 (2005-06-01), None
Y.E.Lee et al, Microstructural evolution and preferred orientation change of radio-frequency-magnetron sputtered ZnO thin films; Journal of Vacuum and Science of Technology Part A, vol. 14, May/Jun. 1996, pp. 1943-1948, 1996 American Vacuum Society.

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