Semiconductor device including a two-layer protective insulating

Details Semiconductor device including a two-layer protective insulating Semiconductor device including a two-layer protective insulating

1997-03-28

1999-03-09

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Thermoelectric cooling

257646, H01L 2358

Patent

active

058805184

ABSTRACT:
A protective insulating film in a semiconductor device is formed in a multi-layer structure. A lower layer portion is constituted by an organic-silane-based silicon oxide film formed by a P-CVD process using organic silane and oxygen to improve step coverage. An upper layer portion is constituted by a silane-based silicon oxide film containing excess silicon in an amount greater than that in the stoichiometric composition and formed by a P-CVD process to improve moisture resistance.

REFERENCES:
patent: 5428244 (1995-06-01), Segawa et al.
patent: 5461254 (1995-10-01), Tsai et al.
patent: 5627403 (1997-05-01), Bacchetta et al.

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