Active solid-state devices (e.g. – transistors – solid-state diode – Tunneling pn junction device – In three or more terminal device
Patent
1997-03-03
1999-08-10
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Tunneling pn junction device
In three or more terminal device
257104, 257497, H01L 29861
Patent
active
059362650
ABSTRACT:
A semiconductor device includes a semiconductor substrate having an element region on the main surface thereof, an element isolation region formed to surround the element region on the main surface of the semiconductor substrate, a gate electrode formed over the element region with a gate insulating film disposed therebetween, a first and a second impurity diffusion region formed on a surface of the element region on both sides of at least part of the gate electrode, a first channel region formed in the surface of the element region below the gate electrode between the first and the second impurity diffusion region when a first preset voltage is applied to the gate electrode, and a first tunnel diode formed in a first interface region between the first impurity diffusion region and the first channel region when the first preset voltage is applied to the gate electrode, wherein the first interface region in which the first tunnel diode is formed is formed in position separated from the element isolation region.
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patent: 5389810 (1995-02-01), Agata et al.
patent: 5583362 (1996-12-01), Maegawa
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patent: 5686739 (1997-11-01), Baba
Eckert II George C.
Kabushiki Kaisha Toshiba
Martin-Wallace Valencia
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