Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1994-08-08
1996-01-16
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 61, 257 66, 257 72, 257350, H01L 2904, H01L 3120
Patent
active
054850207
ABSTRACT:
In a semiconductor device comprising a wiring to be connected to the source region or the drain region of a thin film transistor, at least a portion of the wiring comprising a wiring part having the same cross-sectional structure as said source region or said drain region, and said wiring part being formed continuously with said source region or said drain region simultaneously with the respective end portions of said wiring portions, said source region and said drain region formed in such a manner that the edge thereof is set back from the end of the semiconductor layer constituting the thin film transistor.
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IBM Technical Disclosure Bulletin, vol. 17, No. 6, pp. 1831-1833, Nov. 1974.
Hatanaka Katsunori
Hirai Yutaka
Nakagiri Takashi
Osada Yoshiyuki
Canon Kabushiki Kaisha
Carroll J.
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