Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-10-05
1997-04-15
Tran, Minhloan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 70, 257 72, 257 75, H01L 2976
Patent
active
056212240
ABSTRACT:
A thin film transistor with high performance and improved productivity is offered using crystalline silicon film. As the crystalline silicon film that constitutes the active layer of thin film transistor, the one which has irregularities of 100 to 700 .ANG. in level difference is used. Such crystalline silicon film can be obtained by performing laser light irradiation.
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Teramoto Satoshi
Yamazaki Shunpei
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Minhloan
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