Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-01-25
2011-01-25
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S757000, C257S767000, C257SE23157, C257SE23160
Reexamination Certificate
active
07875976
ABSTRACT:
In one aspect of the present invention, a semiconductor device may include a semiconductor substrate, a silicide layer provided on the semiconductor substrate, a dielectric layer provided on the semiconductor substrate, a contact layer provided on the silicide layer, a metal layer provided in the dielectric layer and electrically connected to the silicide layer via the contact layer, a diffusion barrier layer provided between the dielectric layer and the metal layer, wherein the contact layer includes a first metal element provided in the metal layer, a second metal element provided in the diffusion barrier layer and at least one of a third metal provided in the silicide layer and Si element.
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J. Koike, et al., “Self-Forming Diffusion Barrier Layer in Cu-Mn Alloy Metallization”, Applied Physics Letters 87, 041911, Jul. 22, 2005, pp. 1-3.
Ohuchi Kazuya
Usui Takamasa
Wada Makoto
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Warren Matthew E
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