Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Recrystallized semiconductor material
Reexamination Certificate
2007-02-01
2008-11-18
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Recrystallized semiconductor material
C257S288000, C257SE29104, C438S791000, C438S479000
Reexamination Certificate
active
07453090
ABSTRACT:
A method of manufacturing a semiconductor device includes forming isolation regions, a gate insulator film and gate electrodes, implanting in the silicon substrate with impurity ions, annealing to recover crystallinity of the implanted silicon substrate without diffusing the impurity ions, depositing an interlayer insulator film on the isolation regions, the silicon substrate, and the gate electrodes, and heating the silicon substrate by irradiating a light having a wavelength that the light is absorbed by the silicon substrate without being absorbed by the interlayer insulator film, activating the impurity ions so as to form source and drain regions.
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Notice of Grounds for Rejection issued by the Japanese Patent Office on Apr. 17, 2007, for Japanese Patent Application No. 2003-172239, and English-language translation thereof.
Notice of Grounds for Rejection issued by the Japanese Patent Office on Oct. 31, 2006, for Japanese Patent Application No. 2003-172239, and English-language translation thereof.
Budd Paul A
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Jackson Jerome
Kabushiki Kaisha Toshiba
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