Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Patent
1998-07-02
1999-11-02
Williams, Alexander Oscar
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
257690, 257712, 257664, 257680, 257774, 257713, 257778, 257704, H01L 2312, H01L 2314, H01L 2348
Patent
active
059776315
ABSTRACT:
A semiconductor device includes a high-frequency semiconductor chip having first and second surfaces, and including a first high-frequency transmission line on the first surface and a first grounding conductor on the second surface; and a semiconductor package having third and fourth surfaces, and including a second grounding conductor on the third surface and a second high-frequency transmission line on the fourth surface. The high-frequency semiconductor chip is mounted on the semiconductor package so that the second surface opposes the third surface. The semiconductor device further includes first and second slots for electromagnetically coupling the first high-frequency transmission line to the second high-frequency transmission line. The first and second slots on the first and second grounding conductors, respectively, oppose each other and oppose the first and second high-frequency transmission lines.
REFERENCES:
patent: 4739389 (1988-04-01), Goedbloed
patent: 5422615 (1995-06-01), Shibagaki et al.
patent: 5438305 (1995-08-01), Hikita et al.
patent: 5796165 (1998-08-01), Yoshikawa et al.
patent: 5814883 (1998-09-01), Sawai et al.
patent: 5852391 (1998-12-01), Watanabe et al.
Mitsubishi Denki & Kabushiki Kaisha
Williams Alexander Oscar
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