Semiconductor device including a semiconductor layer having a po

Details Semiconductor device including a semiconductor layer having a po Semiconductor device including a semiconductor layer having a po

1986-07-11

1988-08-23

James, Andrew J.

Metal treatment

Stock

Ferrous

357 2, 357 4, 357 237, 148DIG122, H01L 2904, H01L 2978

Patent

active

047664770

ABSTRACT:
A semiconductor device mainly comprises a semiconductor layer of a polycrystalline silicon film containing at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen as a constituent.

REFERENCES:
patent: 4239554 (1980-12-01), Yamazaki
patent: 4351856 (1982-09-01), Matsui et al.
patent: 4498092 (1985-02-01), Yamazaki
patent: 4539283 (1985-09-01), Shirai et al.
patent: 4668969 (1987-05-01), Yamazaki
Applied Physics Letters, Makino et al, vol. 35, pp. 551-552, Oct. 1, 1979.
Applied Physics Letters, Matsui et al, vol. 37, pp. 936-937, 1980.
Applied Physics Letters, Ginley, vol. 39, pp. 624-626, Oct. 15, 1981.
Kamins et al, IEEE Electron Device Letters, "Hydrogenation . . . Films", vol. EDL-1, No. 8, Aug. 1980, pp. 159-161.

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