Semiconductor device including a power amplifier and a mobile te

Details Semiconductor device including a power amplifier and a mobile te Semiconductor device including a power amplifier and a mobile te

1996-07-22

1998-04-28

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330296, 330297, 330310, 455127, H03F 3193

Patent

active

057450099

ABSTRACT:
The invention relates to a semiconductor device including an amplifier, and a mobile telecommunication terminal comprising this semiconductor device. The amplifier has a very high frequency a.c. signal and comprises a last stage but one of depletion-layer MESFET transistors (T3) and a last transistor stage (T4) of the same type, coupled by a d.c. isolation capacitor (C4). This capacitor (C4) forms with the intrinsic diode (.increment.4) of the transistor (T4) of the last stage a series-arranged rectifier circuit. The latter imposes a shift of the mean level of the a.c. signal on the terminals of said isolation capacitor once the amplitude of the positive part of this a.c. signal has exceeded the conduction threshold of the intrinsic diode (.increment.4). This shift of the mean level (-1.5 volts) is used as a negative voltage (-VG) for biasing the coupled gates of all the stages of the amplifier circuit.

REFERENCES:
patent: 5250912 (1993-10-01), Fujita
patent: 5392004 (1995-02-01), Masliah

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