Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Non-heterojunction superlattice
Reexamination Certificate
2005-01-25
2008-10-14
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Non-heterojunction superlattice
C257S288000
Reexamination Certificate
active
07435988
ABSTRACT:
A semiconductor device may include a substrate and at least one MOSFET adjacent the substrate including a superlattice. The superlattice may include a plurality of stacked groups of layers and a semiconductor cap layer on an uppermost group of layers. Each group of layers of the superlattice may comprise a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The MOSFET may further include source, drain, and gate regions defining a channel through at least a portion of the semiconductor cap layer.
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Dukovski Ilija
Hytha Marek
Kreps Scott A.
Mears Robert J.
Sow Fook Yiptong Jean Augustin Chan
Allen Dyer Doppelt Milbrath & Gilchrist
MEARS Technologies, Inc.
Pham Long
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