Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Patent
1997-02-06
1999-01-12
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Alignment marks
438401, H01L 23544
Patent
active
058594787
ABSTRACT:
In a semiconductor device having alignment marks formed on a semiconductor substrate, the alignment marks include a main convex or concave alignment mark formed on said semiconductor substrate; and a plurality of minute alignment marks formed on the periphery of the main alignment mark. In areas where the minute alignment marks are formed, even when a film of aluminum or its alloy is stacked on the semiconductor substrate by high temperature sputtering, grains will not grow so as to have a large diameter. Thus, the grains created on the periphery of the main alignment mark are not erroneously recognized as the main alignment mark, thereby realizing accurate alignment.
REFERENCES:
patent: 5532520 (1996-07-01), Haraguchi et al.
patent: 5700732 (1997-12-01), Jost et al.
Chaudhuri Olik
Kelley Nathan K.
Mitsubishi Denki & Kabushiki Kaisha
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