Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-11-08
2005-11-08
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S762000, C257S758000, C257S774000
Reexamination Certificate
active
06963139
ABSTRACT:
A barrier layer is formed on an insulating or conducting film provided on a semiconductor substrate, and an electrode or an interconnect made from a conducting film is formed on the barrier layer. The barrier layer includes a tantalum film having the β-crystal structure.
REFERENCES:
patent: 5221449 (1993-06-01), Colgan et al.
patent: 5281485 (1994-01-01), Colgan et al.
patent: 6162728 (2000-12-01), Tsao et al.
patent: 6229211 (2001-05-01), Kawanoue et al.
patent: 6232664 (2001-05-01), Kono
patent: 6235629 (2001-05-01), Takenaka
patent: 6291885 (2001-09-01), Cabral, Jr. et al.
patent: 6346747 (2002-02-01), Grill et al.
patent: 6429524 (2002-08-01), Cooney et al.
patent: 6437440 (2002-08-01), Cabral et al.
patent: 6538324 (2003-03-01), Tagami et al.
patent: 2000-40672 (2000-02-01), None
patent: 2000-106396 (2000-04-01), None
patent: 2000-106936 (2000-04-01), None
patent: 2000-188293 (2000-07-01), None
patent: 2000-294630 (2000-10-01), None
patent: 2001-7204 (2001-01-01), None
patent: 2001-35852 (2001-02-01), None
patent: 2001-160590 (2001-06-01), None
Kwon et al., “Characteristics of Ta as an Underlayer for Cu Interconnects”, Materials Research Society, pp. 711-716 (Apr. 1997).
Kwon et al., “Evidence of Heteroepitaxial Growth of Copper on Beta-Tantalum”, Nov. 1997, Appln. Phys. Lett. 71 (21), pp. 3069-3071.
Harada Takeshi
Ikeda Atsushi
Kishida Takenobu
Sugihara Kohei
Tada Shinya
McDermott Will & Emery LLP
Parekh Nitin
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