Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2011-08-09
2011-08-09
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S256000, C257S272000
Reexamination Certificate
active
07994535
ABSTRACT:
To improve the surge resistance of J-FET, a P-type epitaxial layer2and an N-type epitaxial layer3are formed on a P++-conductive substrate1; N+-conductive source diffusion layer4and drain diffusion layer5, and a p+-conductive gate diffusion layer6are formed in the N-type epitaxial layer3; and a short-circuit preventing layer8of a reversed conduction-type diffusion layer is formed adjacent to the side walls of the source diffusion layer4and the drain diffusion layer5. Having the constitution, the punch-through to be caused by surge voltage is prevented in the surface region of the device, and the surge resistance thereof is improved. Via the holes formed in a protective insulation film9on the surface of the device, a source electrode10connected to the source diffusion layer4, and a drain electrode11connected to the drain diffusion layer5are formed on the surface side of the device. A gate electrode12is formed on the back of the substrate1, and this is connected to the gate diffusion layer6via a contact diffusion layer7formed in the device.
REFERENCES:
patent: 3656031 (1972-04-01), Bresee et al.
patent: 3681668 (1972-08-01), Kobayashi
patent: 4176368 (1979-11-01), Compton
patent: 4322738 (1982-03-01), Bell et al.
patent: 4485392 (1984-11-01), Singer
patent: 4700461 (1987-10-01), Choi et al.
patent: 4795716 (1989-01-01), Yilmaz et al.
patent: 5929503 (1999-07-01), Beasom
patent: 6740907 (2004-05-01), Sakamoto
patent: 6861303 (2005-03-01), Hao et al.
patent: 6900506 (2005-05-01), Yu et al.
patent: 11162993 (1999-06-01), None
patent: 2002-190480 (2002-07-01), None
patent: 2002-313813 (2002-10-01), None
patent: WO 02/103807 (2002-12-01), None
Japanese Office Action, with English translation, issued in Japanese Patent Application No. 2003-154865, mailed Jul. 14, 2009.
Gunji Hiroyuki
Otaki Tetsushi
McDermott Will & Emery LLP
Nadav Ori
Panasonic Corporation
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