Semiconductor device including a high voltage transistor

Details Semiconductor device including a high voltage transistor Semiconductor device including a high voltage transistor

2007-03-27

2007-03-27

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including high voltage or high power devices isolated from...

C257S372000, C257S500000, C257SE27064

Reexamination Certificate

active

11072310

ABSTRACT:
A drain diffusion layer11bincludes a low impurity concentration region5aand a high impurity concentration region5b, and the low impurity concentration region5ais located on the channel region side. An impurity layer7having an opposite conductivity type to the drain diffusion layer11bis formed in the channel region, at a position away from the low impurity concentration region5aby a distance T. Alternatively, the low impurity concentration region5aand the impurity layer7are located so as to contact each other. Still alternatively, a border impurity layer is provided between the low impurity concentration region5aand the impurity layer7. Thus, a semiconductor device including a high voltage transistor capable of suppressing the reduction of the electric current driving capability and performing stable driving, and a method for fabricating the same, can be provided.

REFERENCES:
patent: 5512769 (1996-04-01), Yamamoto
patent: 6404009 (2002-06-01), Mori
patent: 6784490 (2004-08-01), Inoue et al.
patent: 6841837 (2005-01-01), Inoue
patent: 0 337 823 (1989-10-01), None
patent: 1-264262 (1989-10-01), None
patent: 7-245410 (1995-09-01), None
patent: 8-236754 (1996-09-01), None
patent: 9-223793 (1997-08-01), None
Japanese Office Action issued in corresponding Japanese Patent Application No. JP 2004-070784, dated Nov. 8, 2006.

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