Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-08-16
2011-08-16
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE29134
Reexamination Certificate
active
07999386
ABSTRACT:
A semiconductor device contains a semiconductor substrate, an insulating film formed on the semiconductor substrate, an inductor formed over the semiconductor substrate while placing a portion of the insulating film in between, and a guard ring surrounding the inductor in a plan view, and isolating the inductor from other regions, wherein the guard ring contains an annular impurity diffused layer provided in the surficial portion of the semiconductor substrate, and an annular electro-conductor connected to the impurity diffused layer, and extended across a plurality of interconnect layers, up to a layer having a level of height not lower than the layer having the inductor provided therein.
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Translation of JP 2004221317 A, downloaded Sep. 17, 2010.
Chinese Office Action dated Nov. 20, 2009 with English-language translation.
Nakashiba Yasutaka
Uchida Shin-ichi
Dickey Thomas L
McGinn IP Law Group PLLC
Renesas Electronics Corporation
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