Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Reexamination Certificate
2005-05-24
2005-05-24
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
C257S104000, C257S592000
Reexamination Certificate
active
06897546
ABSTRACT:
A semiconductor device which can suppress an electronic breakdown. In the semiconductor device, a base electrode is connected to a base region in a base contact region defined on a surface of the base region. An N-type region having the same conductivity type as an emitter region is provided beneath a boundary portion of the base contact region to surround the base contact region. In other words, a PN-type diode constituted by the P-type base region and the N-type region is provided beneath the boundary portion of the base contact region.
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Loke Steven
Rabin & Berdo P.C.
Rohm & Co., Ltd.
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