Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2011-02-01
2011-02-01
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257SE29345, C257SE29346
Reexamination Certificate
active
07880200
ABSTRACT:
A semiconductor device and production method is disclosed. In one embodiment, the semiconductor device includes a first electrode and a second electrode, located on surfaces of a semiconductor body, and an insulated gate electrode. The semiconductor body has a contact groove for the first electrode in an intermediate oxide layer. Highly doped zones of a first conduction type are located in edge regions of the source connection zone. Below the highly doped zones of the first conduction type, there are highly doped zones of a body zone with a complementary conduction type. In a central region of the source connection zone, the body zone has a net charge carrier concentration with a complementary conduction type which is lower than the charge carrier concentration in the edge regions of the source connection zone.
REFERENCES:
patent: 5861638 (1999-01-01), Oh
patent: 6091086 (2000-07-01), Zommer
patent: 7112868 (2006-09-01), Willmeroth et al.
patent: 7470952 (2008-12-01), Ruething et al.
patent: 2001/0026977 (2001-10-01), Hattori et al.
patent: 2003/0060014 (2003-03-01), Neidhart et al.
patent: 2005/0017290 (2005-01-01), Takahashi et al.
patent: 2005/0263852 (2005-12-01), Ogura et al.
patent: 102005048447 (2007-04-01), None
Fujihira, Tatsuhiko. “Theory of Semiconductor Superjunction Devices”. Jpn. J. Appl. Phys. 36 (1997) pp. 6254-6262.
“Superjunction FETs Boost Efficiency in PWMs” by Hancock. Published Jul. 1, 2005 in “Power Electronics Techology”. Available at http://powerelectronics.com/mag/power—superjunction—fets—boost/.
“Silicon Semiconductor Technology”, Ulrich Hjlleringmann, 4th, Revised and Enlarged edition with 165 illustrations, 19 tables and 39 exercises, 2004.
Hille Frank
Pfirsch Frank
Ruething Holger
Schaeffer Carsten
Dicke Billig & Czaja, PLLC
Infineon Technologies Austria AG
Parker Allen L
Sefer A.
LandOfFree
Semiconductor device including a free wheeling diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device including a free wheeling diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including a free wheeling diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2634330