Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1993-05-28
1995-08-29
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257531, 257777, H01L 2500
Patent
active
054463092
ABSTRACT:
A semiconductor device includes a first chip and a second chip. Active elements such as transistors are fabricated on the surface of the semiconductor substrate of the first chip. Passive elements such as inductors and capacitors are fabricated on the second chip. The first chip is so disposed on the second chip that the reverse surface of the first chip makes a contact onto the surface of the second chip. The active element and the passive element are electrically connected by bonding wire.
REFERENCES:
patent: 4697095 (1987-09-01), Fujii
patent: 4890077 (1989-12-01), Sun
patent: 5008736 (1991-04-01), Davies et al.
Minoru Takaya and Akihiko Fujisawa, "The Development of Composite Multilayer Hybrid Components", IEEE Tokyo Section, Denshi Tokyo No. 30, at pp. 62-66 (1991).
Adachi Chinatsu
Ishikawa Osamu
Nishijima Masaaki
Ota Yorito
Matsushita Electric - Industrial Co., Ltd.
Mintel William
Potter Roy
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