Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2007-05-30
2010-10-19
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S691000
Reexamination Certificate
active
07816757
ABSTRACT:
High density mounting and power source sharing are achieved by a digital semiconductor element and an analog semiconductor element provided in a common semiconductor device. A power layer for analog operation is connected to one end of an EBG (Electromagnetic Band Gap) layer, a power layer for digital operation is connected to the other end of the EBG layer, ground terminals for the respective elements are connected to a common ground layer, and a ground layer for separating the power layer for analog operation and the EBG layer from each other is disposed between the power layer for analog operation and the EBG layer. Thereby, high density mounting is achieved along with reducing interference of the power source to an analog chip.
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Madhavan Swaminathan, et al.; Power Distribution Networks for System-on-Package: Status and Challenges; IEEE Transactions on Advanced Packaging; May 2004; pp. 286-300; vol. 27, No. 2.
Osaka Hideki
Suzuki Eiichi
Uematsu Yutaka
Antonelli, Terry Stout & Kraus, LLP.
Renesas Technology Corp.
Vu Hung
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