Semiconductor device including a diffusion layer

Details Semiconductor device including a diffusion layer Semiconductor device including a diffusion layer

2005-10-11

2005-10-11

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Wire contact, lead, or bond

C257S673000, C257S693000, C257S737000, C257S738000, C257S773000, C257S775000, C257S780000

Reexamination Certificate

active

06954001

ABSTRACT:
The semiconductor device includes a semiconductor element having an electrode formed on a surface thereof, and a metal wiring formed on the surface of the semiconductor element and electrically connected to the electrode. The metal wiring has an external electrode portion functioning as an external electrode. A thickness of the external electrode portion is greater than that of a non-electrode portion of the metal wiring, i.e., a portion of the metal wiring other than the external electrode portion.

REFERENCES:
patent: 5604379 (1997-02-01), Mori
patent: 5821627 (1998-10-01), Mori et al.
patent: 5892273 (1999-04-01), Iwasaki et al.
patent: 6207473 (2001-03-01), Hirai et al.
patent: 6396157 (2002-05-01), Nakanishi et al.
patent: 6414390 (2002-07-01), Nozawa
patent: 6475896 (2002-11-01), Hashimoto
patent: 6512298 (2003-01-01), Sahara et al.
patent: 6587353 (2003-07-01), Sumikawa et al.
patent: 6614113 (2003-09-01), Watanabe et al.
patent: 6662442 (2003-12-01), Matsui et al.
patent: 2002/0060904 (2002-05-01), Higuchi
patent: 2002/0079575 (2002-06-01), Hozoji et al.
patent: 2002/0108781 (2002-08-01), Mune et al.
patent: 1234908 (1999-11-01), None
patent: 9-129772 (1997-05-01), None
patent: 10079362 (1998-03-01), None
patent: 2000-188305 (2000-07-01), None
patent: 2000-299405 (2000-10-01), None
patent: 3137322 (2000-12-01), None
patent: 2001-118956 (2001-04-01), None
patent: 2001-135742 (2001-05-01), None
patent: 2001-291721 (2001-10-01), None
patent: 2001-291733 (2001-10-01), None
US 5,719,439, 2/1998, Iwasaki et al. (withdrawn)

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