Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2008-08-22
2011-12-20
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S233000, C257S234000, C257S417000
Reexamination Certificate
active
08080835
ABSTRACT:
A semiconductor device of the present invention includes a semiconductor substrate, a semiconductor element formed in the semiconductor substrate, a surface layer formed on the semiconductor substrate, and a capacitance type sensor formed on the surface layer. The surface layer has a planar portion whose surface is planar. The capacitance type sensor includes a lower thin film parallelly opposed to the surface of the planar portion and an upper thin film opposed to the lower thin film at a prescribed interval on the side opposite to the surface layer.
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Nguyen Ha Tran T
Rabin & Berdo P.C.
Rohm & Co., Ltd.
Tran Thanh Y
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