Active solid-state devices (e.g. – transistors – solid-state diode – Voltage variable capacitance device
Reexamination Certificate
2005-02-22
2005-02-22
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Voltage variable capacitance device
C257S532000, C257S312000
Reexamination Certificate
active
06858918
ABSTRACT:
It is an object to obtain a semiconductor device including a capacitance having a great Q-value. In an SOI substrate comprising a support substrate (165), a buried oxide film (166) and an SOI layer (171), an isolating oxide film167(167ato167c) is selectively formed in an upper layer portion of the SOI layer (171) with a part of the SOI layer (171) remaining as a P−well region (169). Consequently, an isolation (partial isolation) structure is obtained. An N+diffusion region (168) is formed in the SOI layer (171) between the isolating oxide films (167a) and (167b) and a P+diffusion region (170) is formed in the SOI layer (171) between the isolating oxide films (167b) and (167c). Consequently, there is obtained a junction type variable capacitance (C23) having a PN junction surface of the P−well region (169) provided under the isolating oxide film (167b) and the N+diffusion region (168).
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Hirano Yuuichi
Ipposhi Takashi
Maeda Shigenobu
Landau Matthew C
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Renesas Technology Corp.
Thomas Tom
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