Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Patent
1994-02-02
1999-10-26
Fahmy, Wael M.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
257592, H01L 27082, H01L 27102
Patent
active
059733845
ABSTRACT:
A semiconductor device in which stable and low resistance ohmic contact can be obtained in a base contact region without decreasing the emitter-base reverse breakdown voltage and the current amplification factor is disclosed. In this semiconductor device, p.sup.++ -type base contact layer 8 having an impurity concentration higher than that of p.sup.+ -type base layer 5 is formed in a region spaced apart by a predetermined distance from n.sup.+ -type emitter layer 7 on the main surface of p.sup.+ -type base layer 5. Thus, p.sup.++ -type base contact layer 8 having a high concentration does not contact n.sup.+ -type emitter layer 7, and also the current amplification factor and the emitter-base breakdown voltage are not decreased. Since p.sup.++ -type base contact layer 8 is formed so as to have a diffusion depth shallower than that of n.sup.+ -type emitter layer 7, the lateral spread of p.sup.++ -type base contact layer 8 can be reduced. Therefore, the side of p.sup.++ -type base contact layer 8 having a high concentration can be effectively prevented from contacting the side of n.sup.+ -type emitter layer 7 even when the elements are made smaller.
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H. Murrmann, "Modern Bipolar Technology for High-Performance ICs", Siemens Forsch.-u. Entwickl.-Ber. Bd. 5 (1976) Nr. 6, Springer-Verlag 1976, pp. 353-359.
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S. F. Chu et al., "Process for Fabricating Polysilicon Base Bipolar Transistor", vol. 25, No. 7B, Dec. 1982, pp. 4016-4018.
Fahmy Wael M.
Mitsubishi Denki & Kabushiki Kaisha
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