Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1997-09-02
1999-11-09
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257138, 257139, 257341, 257565, 257332, 257334, H01L 2974, H01L 31111, H01L 27082, H01L 27102
Patent
active
059819812
ABSTRACT:
A high concentration n-type semiconductor region (21) having a width (W) and a distance (D) of constant ranges is selectively formed to be overlapped with or adjacent to a buffer layer (2). When a thickness (L) of an n-type semiconductor layer (3) is 50 .mu.m and the distance (D) is 3 .mu.m, for example, the width (W) is set in the range of 3 .mu.m to 7 .mu.m. In this case, a saturation voltage (V.sub.CE (sat)) and a fall time (t.sub.f) are improved best as compared with a conventional device having no high concentration n-type semiconductor region (21). Thus, the saturation voltage (V.sub.CE (sat)) and the fall time (t.sub.f) are compatibly reduced.
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Patent Abstracts of Japan, vol. 009, No. 089 (E-309), Apr. 18, 1985, JP 59 219963, Dec. 11, 1984.
Patent Abstracts of Japan, vol. 013, No. 564 (E-860), Dec. 14, 1989, JP 01 235272, Sep. 20, 1989.
Mitsubishi Denki & Kabushiki Kaisha
Saadat Mahshid
Wilson Allan R.
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