Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Patent
1996-03-13
1997-07-01
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
257563, 257566, 257579, 257919, H01L 2710
Patent
active
056441592
ABSTRACT:
A semiconductor device implemented using a transistor (Q1) including at least one emitter (E1) and a transistor (Q2) which is larger than the transistor (Q1) including n emitters (E21 to E2n) each having the same area as the emitter (E1) of the transistor (Q1). The emitter (E1) of the transistor (Q1) is disposed between the emitters (E21 to E2n) of the transistor (Q2). When there is deflection of a substrate due to a stress to cause distortion in shape of the emitters, the emitter (E1) has much less distortion in shape than the emitters located on the end portions of the row region in the longitudinal direction. Since the transistor (Q2) has a number of emitters, the distortion in shape of the emitters (E21 to E2n) of the transistor (Q2), if any, has little effect on the whole.
REFERENCES:
patent: 4119997 (1978-10-01), Fulkerson
patent: 4982262 (1991-01-01), Hartman et al.
patent: 5021856 (1991-06-01), Wheaton
patent: 5068702 (1991-11-01), Giannella
patent: 5387813 (1995-02-01), Iranmanesh et al.
Crane Sara W.
Hardy David B.
Mitsubishi Denki & Kabushiki Kaisha
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