Active solid-state devices (e.g. – transistors – solid-state diode – With metal contact alloyed to elemental semiconductor type... – In bipolar transistor structure
Reexamination Certificate
2005-02-25
2009-10-06
Nguyen, Khiem D (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
With metal contact alloyed to elemental semiconductor type...
In bipolar transistor structure
C257S511000, C257S587000, C257SE29030
Reexamination Certificate
active
07598521
ABSTRACT:
A semiconductor device includes a semiconductor chip having a collector region, a base region, and an emitter region that are formed in a semiconductor substrate. The semiconductor chip also includes a base electrode strip in contact with the base region, an emitter electrode strip in contact with the emitter region, an emitter electrode plate disposed above the base electrode strip and the emitter electrode strip, and a base electrode plate disposed adjacent the emitter electrode plate. The device also includes a base terminal external to the semiconductor chip and connected to the base electrode plate and an emitter terminal external to the semiconductor chip and connected to the emitter electrode plate. The base terminal and the emitter terminal are disposed along an edge of the semiconductor chip, and the base electrode strip and the emitter electrode strip are perpendicular to the edge of the semiconductor chip. The base electrode plate may have a protruding portion that engages with a dent formed in the emitter electrode plate.
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Japan Publication No. 2000-040703 “Electrode Structure of Transistor”, Okada Tetsuya, Aug. 2, 2000 (English Translation).
English Translation of the Japanese Publication No. 2000-040703.
Morrison & Foerster / LLP
Nguyen Khiem D
Sanyo Electric Co,. Ltd.
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