Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2005-12-27
2005-12-27
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S565000
Reexamination Certificate
active
06979845
ABSTRACT:
A semiconductor device includes a semiconductor region of a first conductive type. First and second regions of a second conductive type opposite to the first conductive type are provided in a surface of the semiconductor region in a predetermined interval. A third region of the first conductive type is provided between the first and second regions in the surface of the semiconductor region. A fourth region of the first conductive type is provided below the third region inside the semiconductor region to cover the whole of bottom of the third region at least.
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Kawaguchi Hiroshi
Mizuno Riki
Hayes & Soloway P.C.
NEC Electronics Corporation
Wilson Allan R.
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