Semiconductor device in which at least two field effect transist

Details Semiconductor device in which at least two field effect transist Semiconductor device in which at least two field effect transist

1999-12-21

2000-12-26

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257284, 257192, H01L 2980, H01L 31112, H01L 31072, H01L 31109, H01L 310328

Patent

active

061664049

ABSTRACT:
A semiconductor device including field effect transistors having different threshold voltages formed on a common base, characterized by including: a first field effect transistor having a p-n junction gate; and a second field effect transistor having a Schottky junction gate; wherein a threshold voltage of the first field effect transistor is set on the basis of a depth of the p-n junction, and a threshold voltage of the second field effect transistor is set on the basis of selection of a barrier potential of the Schottky junction.

REFERENCES:
patent: 5834802 (1998-11-01), Takahashi et al.
patent: 5869856 (1999-02-01), Kasahara

Affiliated with

Also associated with

Rating

Semiconductor device in which at least two field effect transist does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device in which at least two field effect transist, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device in which at least two field effect transist will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-997784