Semiconductor device in a thin active layer with high breakdown

Details Semiconductor device in a thin active layer with high breakdown Semiconductor device in a thin active layer with high breakdown

1996-06-26

1997-08-19

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257347, 257378, 257577, H01L 2980, H01L 2701, H01L 2976, H01L 27082

Patent

active

056591900

ABSTRACT:
A silicon substrate carries an isolating silicon dioxide layer and a relatively weakly and negatively doped monocrystalline silicon wafer. A component region is delimited in the wafer by an isolating layer. A bipolar transistor in the component region has a positively doped base region which includes a heavily and positively doped base connection and a heavily and negatively doped emitter. The transistor has a PN-junction at the underside of the base region and is series connected with a field effect transistor having a heavily and negatively doped drain connection. The component region is weakly doped and the distance from the PN-junction to the silicon dioxide layer is small so that a region will be readily depleted of charge carriers when applying voltages to the transistors. The voltages produce an electric field of low electrical field strength in the depleted region. This counteracts the breakthrough of a current between the base and the drain connection. The transistors withstand high voltages and require only half the space on the substrate required by corresponding earlier known transistors.

REFERENCES:
patent: 3404295 (1968-10-01), Warner, Jr.
patent: 4292642 (1981-09-01), Appels et al.
patent: 4300150 (1981-11-01), Colak
patent: 4409606 (1983-10-01), Wagenaar et al.
patent: 4422089 (1983-12-01), Vaes et al.
patent: 4485392 (1984-11-01), Singer
patent: 4587545 (1986-05-01), Berthold et al.
patent: 4587656 (1986-05-01), Hartman et al.
patent: 4605948 (1986-08-01), Martinelli
patent: 4608590 (1986-08-01), Hartman et al.
patent: 4639761 (1987-01-01), Singer et al.
patent: 4868624 (1989-09-01), Grung et al.
J. A. Appels et al., "High Voltage Thin Layer Devices (Resurf Devices)" IEEE, Proceedings from IEDM, pp. 238-241 (1979).
J. A. Appels et al., "Thin Layer High-Voltage Devices (Resurf Devices)" Philip J. Res., vol. 35, No. 1, pp. 1-13 (1980).
H. W. Becke, "Approaches to Isolation in High Voltage Integrated Circuits (Invited Paper)", IEEE, Proceedings from IEDM, pp. 724-727 (1985).
M. F. Chang et al., "Advanced 1200v HVIC Technology" IEEE, Proceedings from IEDM, pp. 230-233 (1986).
A. Litwin et al., "Extremely Compact CMOS Compatible Bipolar Silicon-On-Insulator Transistor for Mixed High Voltage and High Density Integrated Circuit Applications," 23rd European Solid State Devise Research Conference, Grenoble, France (Sep. 13-16, 1993).
A. W. Ludikhuize, "A Versatile 700-1200-V IC Process for Analog and Switching Applications", IEEE Transactions on Electron Devices, vol. 38, No. 7, pp. 1582-1589 (Jul. 1991).
S. M. Sze, Physics of Semiconductor Devices, Second Edition, John Wiley & Sons, pp. 312-324 (1981).

Affiliated with

Also associated with

Rating

Semiconductor device in a thin active layer with high breakdown does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device in a thin active layer with high breakdown , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device in a thin active layer with high breakdown will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1106889