Semiconductor device, heterojunction bipolar transistor, and hig

Details Semiconductor device, heterojunction bipolar transistor, and hig Semiconductor device, heterojunction bipolar transistor, and hig

1994-02-03

1995-10-17

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 25, 257194, 257197, H01L 2712, H01L 4500, H01L 2980, H01L 2972

Patent

active

054593310

ABSTRACT:
A semiconductor device includes a laminated structure including a GaAs layer and an InGaAs layer grown on the GaAs layer and through which operating current flows perpendicular to the InGaAs layer. The InGaAs layer includes a plurality of very thin GaAs layers through which most of the operating current passes by tunneling, located within the InGaAs layer and spaced apart at intervals larger than a critical thickness at which a pseudomorphic state of an InGaAs crystal grown on a GaAs crystal is maintained. Therefore, segregation of In atoms, i.e., unfavorable movement of In atoms, toward the surface of the growing InGaAs crystal, that occurs when the InGaAs layer is grown at a high temperature, and loss of In atoms is suppressed by the very thin GaAs layers. Thus, the InGaAs layer can be grown on the GaAs layer at a high temperature without degrading the surface morphology of the InGaAs layer. An InGaAs layer with improved surface morphology, reduced contact resistance and sheet resistivity, and an improved uniformity of this resistance and resistivity in a wafer can be grown.

REFERENCES:
patent: 4088515 (1978-05-01), Blakeslee et al.
patent: 5017973 (1991-05-01), Mizuta et al.
patent: 5146295 (1992-09-01), Imanaka et al.
patent: 5166766 (1992-11-01), Grudkowski et al.
patent: 5258632 (1993-11-01), Sawada

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