Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2011-07-05
2011-07-05
Parekh, Nitin (Department: 2811)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S118000, C438S629000, C438S667000, C438S127000, C257SE21596
Reexamination Certificate
active
07972903
ABSTRACT:
An insulating film covering the lower surface of an external connection electrode of a semiconductor construct is formed. A mask metal layer in which there is formed an opening having a planar size smaller than that of the external connection electrode is formed on the insulating film. The mask metal layer is used as a mask to apply a laser beam to the insulating film, such that a connection opening reaching the external connection electrode is formed in the insulating film. A wiring line is formed on the insulating film in such a manner as to be connected to the external connection electrode via the connection opening.
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Japanese Office Action dated Jan. 12, 2010 and English translation thereof issued in a counterpart Japanese Application No. 2008-020691.
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Casio Computer Co. Ltd.
Holtz Holtz Goodman & Chick PC
Parekh Nitin
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