Semiconductor device having wiring layer composed of silicon fil

Details Semiconductor device having wiring layer composed of silicon fil Semiconductor device having wiring layer composed of silicon fil

1988-05-20

1989-10-31

Carroll, J.

357 54, 357 65, 357 71, H01L 2934, H01L 2904, H01L 2348

Patent

active

048781053

ABSTRACT:
A semiconductor device having a wiring layer composed of a polycrystalline silicon film and an aluminum film is disclosed. The wiring layer is provided on an insulating layer with the silicon film and the aluminum film formed on and having the same pattern with the silicon film, and the aluminum film is directly contacted to an impurity region of a substrate without interposing the silicon film.

REFERENCES:
patent: 3881971 (1975-05-01), Greer et al.
patent: 3913126 (1975-10-01), Hooker et al.
patent: 4239559 (1980-12-01), Ito
patent: 4514747 (1985-04-01), Miyata et al.
patent: 4549199 (1988-10-01), Yamauchi et al.
patent: 4712125 (1987-12-01), Bhatia et al.

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