Semiconductor device having wires that vary in wiring pitch

Details Semiconductor device having wires that vary in wiring pitch Semiconductor device having wires that vary in wiring pitch

2008-07-22

2008-07-22

Lee, Hsien-ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S781000, C257S784000, C257SE23174, C257SE23070, C438S617000, C438S618000

Reexamination Certificate

active

07402904

ABSTRACT:
A semiconductor device includes a first wiring layer having a first wiring pitch and a second wiring layer having a second wiring pitch that differs from the first wiring pitch. The device further includes a third wiring layer which connects the first wiring layer and the second wiring layer and has a wiring incident angle of less than 45 degrees to at least the first wiring layer.

REFERENCES:
patent: 6619785 (2003-09-01), Sato
patent: 2006/0038292 (2006-02-01), Minami et al.
patent: 4-324956 (1992-11-01), None
patent: 8-279602 (1996-10-01), None
patent: 2002-329783 (2002-11-01), None
U.S. Appl. No. 11/756,016, filed May 31, 2007, Saito.

Affiliated with

Also associated with

Rating

Semiconductor device having wires that vary in wiring pitch does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having wires that vary in wiring pitch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having wires that vary in wiring pitch will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2811971